IXXH30N65B4
IGBT PT 650V 65A TO247ADManufacturer: IXYS
Categories: Single IGBTs
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The IXYS GenX4™, XPT™ series IXXH30N65B4 is a 650V, 65A Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. This PT IGBT features a low on-state voltage of 2V at 30A and 15V gate voltage, with a collector current (Ic) of 65A and a pulsed collector current (Icm) of 146A. The device offers efficient switching characteristics with turn-on delay (Td(on)) of 32ns and turn-off delay (Td(off)) of 170ns at 25°C, accompanied by switching energies of 1.55mJ (on) and 480µJ (off) under the specified test conditions. With a maximum power dissipation of 230W and an operating temperature range of -55°C to 175°C, this IGBT is suitable for demanding environments. The IXXH30N65B4 is provided in a TO-247AD package, facilitating through-hole mounting. This component is commonly utilized in power factor correction, motor drives, and power supply applications.
Additional Information
Series: GenX4™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 25 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 30A |
| Supplier Device Package | TO-247AD (IXXH) |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 32ns/170ns |
| Switching Energy | 1.55mJ (on), 480µJ (off) |
| Test Condition | 400V, 30A, 15Ohm, 15V |
| Gate Charge | 52 nC |
| Current - Collector (Ic) (Max) | 65 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 146 A |
| Power - Max | 230 W |
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