IXXH30N60C3D1
IGBT 600V 60A 270W TO247Manufacturer: IXYS
Categories: Single IGBTs
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IXYS GenX3™, XPT™ IGBT IXXH30N60C3D1. This IXYS Power Transistor (PT) IGBT offers a 600 V collector-emitter breakdown voltage and a continuous collector current of 60 A. It features a maximum power dissipation of 270 W and a pulsed collector current of 110 A. The device exhibits a typical gate charge of 37 nC and a collector-emitter saturation voltage (Vce(on)) of 2.3 V at 15 V gate-emitter voltage and 24 A collector current. Switching characteristics include turn-on delay (Td(on)) of 23 ns and turn-off delay (Td(off)) of 77 ns, with switching energies of 500 µJ (on) and 270 µJ (off) under test conditions of 400 V, 24 A, 10 Ohm, and 15 V. Reverse recovery time (trr) is specified at 25 ns. The IXXH30N60C3D1 is housed in a TO-247AD (IXXH) package for through-hole mounting and operates across an extended temperature range of -55°C to 175°C (TJ). This component is suitable for applications in power conversion, motor control, and renewable energy systems.
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 25 ns |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 24A |
| Supplier Device Package | TO-247AD (IXXH) |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 23ns/77ns |
| Switching Energy | 500µJ (on), 270µJ (off) |
| Test Condition | 400V, 24A, 10Ohm, 15V |
| Gate Charge | 37 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 110 A |
| Power - Max | 270 W |
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