The IXYS IXXH30N60B3 is a 600V, 60A insulated gate bipolar transistor (IGBT) from the GenX3™, XPT™ series. This PT IGBT features a maximum power dissipation of 270W and a collector current of 60A, with a pulsed collector current capability of 115A. The device exhibits a low on-state voltage (Vce(on)) of 1.85V at 15V gate-emitter voltage and 24A collector current. Key switching characteristics include a gate charge of 39 nC and switching energies of 550µJ (on) and 500µJ (off) under test conditions of 400V, 24A, 10 Ohm, and 15V. The IXXH30N60B3 is housed in a TO-247AD (IXXH) package, designed for through-hole mounting, and operates within a temperature range of -55°C to 175°C. This component is suitable for high-power switching applications in industries such as industrial motor drives and power supply systems.
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.85V @ 15V, 24A |
| Supplier Device Package | TO-247AD (IXXH) |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 23ns/97ns |
| Switching Energy | 550µJ (on), 500µJ (off) |
| Test Condition | 400V, 24A, 10Ohm, 15V |
| Gate Charge | 39 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 115 A |
| Power - Max | 270 W |
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