The IXYS GenX3™, XPT™ series IXXH150N60C3 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This PT IGBT features a collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 300 A, with a pulsed capability up to 150 A. The device offers a maximum power dissipation of 1360 W and a low on-state voltage of 2.5 V at 15 V gate-emitter voltage and 150 A collector current. Switching characteristics include typical turn-on delay of 34 ns and turn-off delay of 120 ns at 25°C, with associated switching energies of 3.4 mJ (on) and 1.8 mJ (off) under specified test conditions. The IXXH150N60C3 is housed in a TO-247AD package suitable for through-hole mounting and operates across a temperature range of -55°C to 175°C (TJ). This component is frequently utilized in industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 150A |
| Supplier Device Package | TO-247AD |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 34ns/120ns |
| Switching Energy | 3.4mJ (on), 1.8mJ (off) |
| Test Condition | 400V, 75A, 2Ohm, 15V |
| Gate Charge | 200 nC |
| Current - Collector (Ic) (Max) | 300 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 150 A |
| Power - Max | 1360 W |
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