IXXH140N65C4
DISC IGBT XPT-GENX4 TO-247ADManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXXH140N65C4 is a Disruptive, Planar Trench (XPT™), GenX4™ series Insulated Gate Bipolar Transistor (IGBT). This device features a 650 V collector-emitter breakdown voltage and a continuous collector current of 320 A, with a pulsed current capability of 730 A. The Vce(on) is specified as 2.3 V at 15 V gate-emitter voltage and 120 A collector current, with a maximum power dissipation of 1200 W. The gate charge is 250 nC, and switching characteristics at 400 V, 75 A, 4.7 Ohm, 15 V indicate a turn-on delay (Td(on)) of 43 ns and a turn-off delay (Td(off)) of 240 ns, with a reverse recovery time (trr) of 90 ns. Switching energy is 4.9 mJ for turn-on and 1.7 mJ for turn-off. This component is packaged in a TO-247-3 (TO-247AD) through-hole configuration, suitable for operation across a temperature range of -55°C to 175°C. Applications include industrial motor drives and power supplies.
Additional Information
Series: XPT™, GenX4™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 90 ns |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 120A |
| Supplier Device Package | TO-247 (IXTH) |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 43ns/240ns |
| Switching Energy | 4.9mJ (on), 1.7mJ (off) |
| Test Condition | 400V, 75A, 4.7Ohm, 15V |
| Gate Charge | 250 nC |
| Current - Collector (Ic) (Max) | 320 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 730 A |
| Power - Max | 1200 W |
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