IXXH140N65B4
DISC IGBT XPT-GENX4 TO-247ADManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXXH140N65B4 is a high-performance Trench IGBT from the XPT™, GenX4™ series, featuring a 650V collector-emitter breakdown voltage. This discrete power semiconductor offers a continuous collector current of 340A and a pulsed collector current of 840A, with a maximum power dissipation of 1200W. Designed for demanding applications, it boasts a low on-state voltage (Vce(on)) of 1.9V at 15V gate-emitter voltage and 120A collector current. Key switching characteristics include a typical turn-on delay (Td(on)) of 54ns and a turn-off delay (Td(off)) of 270ns at 25°C, with a switching energy of 5.75mJ (on) and 2.67mJ (off) under specified test conditions. The component operates across a wide temperature range of -55°C to 175°C and is supplied in a TO-247-3 package, suitable for through-hole mounting. This device finds application in power conversion systems for industrial and renewable energy sectors.
Additional Information
Series: XPT™, GenX4™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 105 ns |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 120A |
| Supplier Device Package | TO-247 (IXTH) |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 54ns/270ns |
| Switching Energy | 5.75mJ (on), 2.67mJ (off) |
| Test Condition | 400V, 100A, 4.7Ohm, 15V |
| Gate Charge | 250 nC |
| Current - Collector (Ic) (Max) | 340 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 840 A |
| Power - Max | 1200 W |
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