IXXH110N65C4
IGBT 650V 234A 880W TO247ADManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXXH110N65C4 is a 650V, 234A Insulated Gate Bipolar Transistor (IGBT) from the GenX4™, XPT™ series. This PT IGBT features a low collector-emitter saturation voltage (Vce(on)) of 2.35V at 15V gate-emitter voltage and 110A collector current. With a continuous collector current of 234A and a pulsed collector current of 600A, this device is designed for high-power switching applications. The unit exhibits switching energy values of 2.3mJ (turn-on) and 600µJ (turn-off) under test conditions of 400V, 55A, 2 Ohm, and 15V. The gate charge is 180 nC. Packaged in a TO-247AD, the IXXH110N65C4 supports through-hole mounting and operates within a temperature range of -55°C to 175°C. This component is suitable for power factor correction, motor drives, and industrial power supplies.
Additional Information
Series: GenX4™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.35V @ 15V, 110A |
| Supplier Device Package | TO-247AD (IXXH) |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 35ns/143ns |
| Switching Energy | 2.3mJ (on), 600µJ (off) |
| Test Condition | 400V, 55A, 2Ohm, 15V |
| Gate Charge | 180 nC |
| Current - Collector (Ic) (Max) | 234 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 600 A |
| Power - Max | 880 W |
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