IXXH110N65B4
DISC IGBT XPT-GENX4 TO-247ADManufacturer: IXYS
Categories: Single IGBTs
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IXYS IXXH110N65B4 is a discrete IGBT from the XPT™, GenX4™ series. This PT IGBT features a 650 V collector-emitter breakdown voltage and a continuous collector current of 250 A, with a pulsed current rating of 570 A. It offers a low on-state voltage (Vce(on)) of 2.1V at 15V gate-emitter voltage and 110A collector current. The device dissipates a maximum power of 880 W and has a typical switching energy of 2.2 mJ (on) and 1.05 mJ (off) under test conditions of 400V, 55A, 2 Ohm, and 15V. With a gate charge of 183 nC, this IGBT is designed for through-hole mounting in a TO-247-3 package. The operating temperature range is -55°C to 175°C (TJ). This component is suitable for applications in industrial power, motor drives, and renewable energy systems.
Additional Information
Series: XPT™, GenX4™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 40 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 110A |
| Supplier Device Package | TO-247 (IXTH) |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 26ns/146ns |
| Switching Energy | 2.2mJ (on), 1.05mJ (off) |
| Test Condition | 400V, 55A, 2Ohm, 15V |
| Gate Charge | 183 nC |
| Current - Collector (Ic) (Max) | 250 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 570 A |
| Power - Max | 880 W |
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