IXXH100N60C3
IGBT 600V 190A 830W TO247ADManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXXH100N60C3 is a robust Insulated Gate Bipolar Transistor (IGBT) from the GenX3™, XPT™ series. This PT IGBT offers a 600V collector-emitter breakdown voltage and a continuous collector current capacity of 190A, with a pulsed capability reaching 380A. It dissipates a maximum power of 830W and features a low on-state voltage drop of 2.2V at 15V gate-emitter voltage and 70A collector current. The device exhibits typical turn-on delay of 30ns and turn-off delay of 90ns at 25°C, with switching energies of 2mJ (on) and 950µJ (off) under test conditions of 360V, 70A, 2 Ohm, and 15V. Its through-hole mounting in a TO-247AD package ensures effective thermal management across an operating temperature range of -55°C to 175°C. Applications include power factor correction, motor control, and uninterruptible power supplies.
Additional Information
Series: GenX3™, XPT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 70A |
| Supplier Device Package | TO-247AD (IXXH) |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 30ns/90ns |
| Switching Energy | 2mJ (on), 950µJ (off) |
| Test Condition | 360V, 70A, 2Ohm, 15V |
| Gate Charge | 150 nC |
| Current - Collector (Ic) (Max) | 190 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 380 A |
| Power - Max | 830 W |
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