IXSX80N60B
IGBT 600V 160A 500W PLUS247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXSX80N60B is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This component offers a robust 600V collector-emitter breakdown voltage and a continuous 160A collector current (Ic), with a pulsed capability of up to 300A (Icm). The IXSX80N60B features a maximum power dissipation of 500W and a low on-state voltage (Vce(on)) of 2.5V at 15V gate-emitter voltage and 80A collector current. Switching characteristics include an off-state switching energy of 4.2mJ and typical turn-on and turn-off delays of 60ns and 140ns respectively at 25°C, under test conditions of 480V, 80A, 2.7 Ohm, and 15V. With a gate charge of 240nC, this IGBT is suitable for use in power factor correction, motor drives, and industrial power supplies. It is packaged in a Through Hole PLUS247™-3 configuration and operates within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 80A |
| Supplier Device Package | PLUS247™-3 |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 60ns/140ns |
| Switching Energy | 4.2mJ (off) |
| Test Condition | 480V, 80A, 2.7Ohm, 15V |
| Gate Charge | 240 nC |
| Current - Collector (Ic) (Max) | 160 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 300 A |
| Power - Max | 500 W |
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