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IXSX50N60BD1

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IXSX50N60BD1

IGBT 600V 75A 300W PLUS247

Manufacturer: IXYS

Categories: Single IGBTs

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The IXYS IXSX50N60BD1 is a 600V, 75A insulated gate bipolar transistor (IGBT) designed for high-power switching applications. This component, packaged in a PLUS247™-3 through-hole configuration, offers a continuous collector current of 75A and a pulsed collector current of 200A. It features a maximum power dissipation of 300W and a collector-emitter voltage (Vce(on)) of 2.5V at 15V Vge and 50A Ic. With a gate charge of 167 nC and typical turn-on/turn-off delay times of 70ns/150ns respectively at 25°C, this IGBT is suitable for demanding applications in power conversion and motor control systems. The operating temperature range is -55°C to 150°C (TJ).

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3 Variant
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)35 ns
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 50A
Supplier Device PackagePLUS247™-3
IGBT Type-
Td (on/off) @ 25°C70ns/150ns
Switching Energy3.3mJ (off)
Test Condition480V, 50A, 2.7Ohm, 15V
Gate Charge167 nC
Current - Collector (Ic) (Max)75 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)200 A
Power - Max300 W

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