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IXSX50N60AU1

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IXSX50N60AU1

IGBT 600V 75A 300W PLUS247

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXSX50N60AU1 is a 600V, 75A Insulated Gate Bipolar Transistor (IGBT) housed in a PLUS247™-3 package. This through-hole component offers a continuous collector current of 75A and a pulsed collector current of 200A. With a maximum power dissipation of 300W and a collector-emitter saturation voltage (Vce(on)) of 2.7V at 15V gate-source voltage and 50A collector current, it provides efficient switching. Key parameters include a gate charge of 190 nC and a reverse recovery time (trr) of 50 ns. Operating across a temperature range of -55°C to 150°C (TJ), this IGBT is suitable for applications in power conversion, motor drives, and industrial power supplies. The device is supplied in tube packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3 Variant
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)50 ns
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 50A
Supplier Device PackagePLUS247™-3
IGBT Type-
Td (on/off) @ 25°C70ns/200ns
Switching Energy6mJ (off)
Test Condition480V, 50A, 2.7Ohm, 15V
Gate Charge190 nC
Current - Collector (Ic) (Max)75 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)200 A
Power - Max300 W

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