IXSX35N120BD1
IGBT 1200V 70A 300W PLUS247Manufacturer: IXYS
Categories: Single IGBTs
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IXYS IXSX35N120BD1 is a Power Transistor (PT) Insulated Gate Bipolar Transistor (IGBT) with a maximum collector-emitter voltage of 1200V. This through-hole component, packaged in a PLUS247™-3, offers a continuous collector current of 70A and a pulsed collector current of 140A. It features a Vce(on) of 3.6V at 15V gate-source voltage and 35A collector current. Key switching characteristics include a gate charge of 120 nC, a reverse recovery time of 40 ns, and typical turn-on and turn-off delays of 36ns and 160ns respectively at 25°C. The device can dissipate up to 300W of power and operates across a temperature range of -55°C to 150°C. This IGBT is suitable for applications in industrial motor drives and power supplies.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 40 ns |
| Vce(on) (Max) @ Vge, Ic | 3.6V @ 15V, 35A |
| Supplier Device Package | PLUS247™-3 |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 36ns/160ns |
| Switching Energy | 5mJ (off) |
| Test Condition | 960V, 35A, 5Ohm, 15V |
| Gate Charge | 120 nC |
| Current - Collector (Ic) (Max) | 70 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 140 A |
| Power - Max | 300 W |
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