IXST45N120B
IGBT PT 1200V 75A TO268AAManufacturer: IXYS
Categories: Single IGBTs
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IXYS IXST45N120B is a high-voltage Planar Technology (PT) Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This component features a 1200 V collector-emitter breakdown voltage and a continuous collector current capability of 75 A at a case temperature of 100°C, with a pulsed current rating of 180 A. The IGBT exhibits a low on-state voltage (Vce(on)) of 3 V at 15 V gate-emitter voltage and 45 A collector current, ensuring efficient power transfer. With a maximum power dissipation of 300 W and a switching energy of 13 mJ (off) under test conditions of 960 V, 45 A, 5 Ohm, and 15 V, the IXST45N120B is suitable for applications requiring robust switching performance. The device is housed in a TO-268AA (TO-268-3, D3PAK) surface-mount package, facilitating integration into compact power designs. Typical operating temperature range is -55°C to 150°C (TJ). This IGBT is commonly utilized in power factor correction, uninterruptible power supplies (UPS), and industrial motor drives.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 45A |
| Supplier Device Package | TO-268AA |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 36ns/360ns |
| Switching Energy | 13mJ (off) |
| Test Condition | 960V, 45A, 5Ohm, 15V |
| Gate Charge | 120 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 180 A |
| Power - Max | 300 W |
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