IXST40N60B
IGBT PT 600V 75A TO268AAManufacturer: IXYS
Categories: Single IGBTs
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IXYS IXST40N60B is a 600V, 75A Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This PT IGBT features a high collector current capability of 75A continuous and a pulsed capability of 150A. The Vce(on) is specified at a maximum of 2.2V at 15V gate-emitter voltage and 40A collector current, with typical turn-on and turn-off times of 50ns and 110ns respectively at 25°C. The component boasts a low switching energy of 1.8mJ (off) under test conditions of 480V, 40A, and 2.7 Ohms. With a maximum power dissipation of 280W and a junction temperature range of -55°C to 150°C, the IXST40N60B is suitable for use in power supplies, motor drives, and industrial equipment. This device is offered in a TO-268AA surface mount package.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 40A |
| Supplier Device Package | TO-268AA |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 50ns/110ns |
| Switching Energy | 1.8mJ (off) |
| Test Condition | 480V, 40A, 2.7Ohm, 15V |
| Gate Charge | 190 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 150 A |
| Power - Max | 280 W |
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