IXST30N60CD1
IGBT 600V 55A TO268AAManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXST30N60CD1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current capability of 55A, with a pulsed collector current of up to 110A. The Vce(on) is specified at a maximum of 2.5V at 15V gate-emitter voltage and 30A collector current, under test conditions of 480V, 30A, 4.7 Ohm, and 15V. With a maximum power dissipation of 200W and a switching energy of 700µJ (off), this IGBT is suitable for power factor correction, motor drives, and uninterruptible power supplies. The device offers a typical gate charge of 100 nC and a reverse recovery time of 50 ns, contributing to efficient switching performance. It is housed in a TO-268AA surface mount package, facilitating integration into compact designs. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 50 ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 30A |
| Supplier Device Package | TO-268AA |
| IGBT Type | - |
| Td (on/off) @ 25°C | 30ns/90ns |
| Switching Energy | 700µJ (off) |
| Test Condition | 480V, 30A, 4.7Ohm, 15V |
| Gate Charge | 100 nC |
| Current - Collector (Ic) (Max) | 55 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 110 A |
| Power - Max | 200 W |
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