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IXST30N60B2D1

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IXST30N60B2D1

IGBT PT 600V 48A TO268AA

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXST30N60B2D1 is a Trench IGBT Power Transistor with a collector-emitter voltage rating of 600V and a continuous collector current capability of 48A, with a pulsed current rating of 90A. This device features a low Vce(on) of 2.5V at 15V gate-emitter voltage and 24A collector current. The power dissipation is rated at 250W. It utilizes a Trench IGBT architecture for enhanced performance. The gate charge is specified at 50 nC, with typical turn-on and turn-off delays of 30ns and 130ns respectively at 25°C, under a 400V, 24A, 5 Ohm load condition. Reverse recovery time is 30 ns. This component is housed in a TO-268AA (TO-268-3, D3PAK) package suitable for surface mounting and operates within an ambient temperature range of -55°C to 150°C. Applications include power switching and motor control in industrial and renewable energy systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)30 ns
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 24A
Supplier Device PackageTO-268AA
IGBT TypePT
Td (on/off) @ 25°C30ns/130ns
Switching Energy550µJ (off)
Test Condition400V, 24A, 5Ohm, 15V
Gate Charge50 nC
Current - Collector (Ic) (Max)48 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)90 A
Power - Max250 W

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