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IXST24N60BD1

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IXST24N60BD1

IGBT 600V 48A TO268AA

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

IXYS IXST24N60BD1 is a 600V, 48A Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This device features a maximum collector current of 48A, with a pulsed capability up to 96A, and a maximum power dissipation of 150W. The Vce(on) is rated at 2.5V at 15V gate-emitter voltage and 24A collector current, with typical turn-on delay of 50ns and turn-off delay of 150ns at 25°C. Its high gate charge of 41nC and switching energy of 1.3mJ (off) are optimized for efficient operation. The IXST24N60BD1 is housed in a TO-268AA surface mount package, suitable for demanding thermal environments with an operating temperature range of -55°C to 150°C. This component is frequently utilized in industrial power supplies, motor control, and renewable energy systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Box
Technical Details:
PackagingBox
Package / CaseTO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)25 ns
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 24A
Supplier Device PackageTO-268AA
IGBT Type-
Td (on/off) @ 25°C50ns/150ns
Switching Energy1.3mJ (off)
Test Condition480V, 24A, 33Ohm, 15V
Gate Charge41 nC
Current - Collector (Ic) (Max)48 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)96 A
Power - Max150 W

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