IXST15N120BD1
IGBT PT 1200V 30A TO268AAManufacturer: IXYS
Categories: Single IGBTs
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IXYS IXST15N120BD1 is a Power Transistor, specifically an IGBT PT with a 1200V collector-emitter breakdown voltage. This device features a continuous collector current rating of 30A (60A pulsed) and a maximum power dissipation of 150W. The gate charge is 57 nC, with typical turn-on and turn-off delays of 30ns and 148ns respectively at 25°C, tested under a 960V, 15A, 10 Ohm, 15V condition. The on-state collector-emitter voltage (Vce(on)) is a maximum of 3.4V at 15V gate-source voltage and 15A collector current. The reverse recovery time (trr) is 30ns, and switching energy (Eoff) is 1.5mJ. This IGBT is housed in a TO-268AA (TO-268-3, D3PAK) surface mount package, suitable for operation across a temperature range of -55°C to 150°C (TJ). It finds application in power switching and conversion, often within industrial automation and power supply designs.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 30 ns |
| Vce(on) (Max) @ Vge, Ic | 3.4V @ 15V, 15A |
| Supplier Device Package | TO-268AA |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 30ns/148ns |
| Switching Energy | 1.5mJ (off) |
| Test Condition | 960V, 15A, 10Ohm, 15V |
| Gate Charge | 57 nC |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 60 A |
| Power - Max | 150 W |
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