IXST15N120B
IGBT PT 1200V 30A TO268AAManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXST15N120B is a Power Transistor (PT) Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This device features a Collector-Emitter Breakdown Voltage (Vce(max)) of 1200 V and a continuous Collector Current (Ic) of 30 A, with a pulsed capability of 60 A. The on-state voltage drop (Vce(on)) is rated at a maximum of 3.4 V at 15 V gate-emitter voltage and 15 A collector current. Its switching characteristics include an off-state switching energy of 1.5 mJ, with typical on and off delays of 30 ns and 148 ns respectively at 25°C under test conditions of 960 V, 15 A, 10 O, and 15 V. The IGBT offers a maximum power dissipation of 150 W. It is packaged in a TO-268AA surface mount configuration and operates within an ambient temperature range of -55°C to 150°C (TJ). This component is suitable for use in industries such as industrial automation, power supplies, and motor control.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.4V @ 15V, 15A |
| Supplier Device Package | TO-268AA |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 30ns/148ns |
| Switching Energy | 1.5mJ (off) |
| Test Condition | 960V, 15A, 10Ohm, 15V |
| Gate Charge | 57 nC |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 60 A |
| Power - Max | 150 W |
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