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IXSR40N60CD1

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IXSR40N60CD1

IGBT 600V 62A 210W ISOPLUS247

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXSR40N60CD1 is a 600V, 62A Insulated Gate Bipolar Transistor (IGBT) with a continuous collector current of 62A and a pulsed collector current of 150A. This PT IGBT features a maximum power dissipation of 210W and a low collector-emitter saturation voltage (Vce(on)) of 2.5V at 15V gate-emitter voltage and 40A collector current. The device exhibits a gate charge of 190nC and a switching energy of 1mJ (off), with typical on/off delay times of 50ns/70ns at 25°C. The IXYS IXSR40N60CD1 is housed in an ISOPLUS247™ package, designed for through-hole mounting. This component is suitable for applications in industrial and high-power motor control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)35 ns
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 40A
Supplier Device PackageISOPLUS247™
IGBT TypePT
Td (on/off) @ 25°C50ns/70ns
Switching Energy1mJ (off)
Test Condition480V, 40A, 2.7Ohm, 15V
Gate Charge190 nC
Current - Collector (Ic) (Max)62 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)150 A
Power - Max210 W

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