IXSR35N120BD1
IGBT 1200V 70A 250W ISOPLUS247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXSR35N120BD1 is a 1200V, 70A Insulated Gate Bipolar Transistor (IGBT) from IXYS, packaged in an ISOPLUS247™ through-hole configuration. This Power Transistor (PT) IGBT features a maximum collector current (Ic) of 70A and a pulsed collector current (Icm) of 140A. With a power dissipation of 250W and a collector-emitter breakdown voltage of 1200V, it is suitable for demanding applications. Key parameters include a gate charge of 120 nC and a reverse recovery time (trr) of 40 ns. The IGBT exhibits a Vce(on) of 3.6V at 15V Vge and 35A Ic, with typical turn-on and turn-off delays of 36 ns and 160 ns respectively at 25°C. Switching energy is rated at 5mJ (off). This component operates within a temperature range of -55°C to 150°C. The IXSR35N120BD1 is utilized in power conversion and motor drive applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BoxDownload Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 40 ns |
| Vce(on) (Max) @ Vge, Ic | 3.6V @ 15V, 35A |
| Supplier Device Package | ISOPLUS247™ |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 36ns/160ns |
| Switching Energy | 5mJ (off) |
| Test Condition | 960V, 35A, 2.7Ohm, 15V |
| Gate Charge | 120 nC |
| Current - Collector (Ic) (Max) | 70 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 140 A |
| Power - Max | 250 W |
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