IXSQ20N60B2D1
IGBT 600V 35A 190W TO3PManufacturer: IXYS
Categories: Single IGBTs
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IXYS IXSQ20N60B2D1 is a 600V Punch-Through (PT) Insulated Gate Bipolar Transistor (IGBT) with a continuous collector current of 35A and a maximum power dissipation of 190W. This through-hole component, housed in a TO-3P package, features a Vce(on) of 2.5V at 15V gate-emitter voltage and 16A collector current. Key switching characteristics include a gate charge of 33 nC and a reverse recovery time (trr) of 30 ns. The device is rated for operation across a wide temperature range of -55°C to 150°C (TJ). Typical applications for this power semiconductor include industrial motor drives, power supplies, and welding equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 30 ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 16A |
| Supplier Device Package | TO-3P |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 30ns/116ns |
| Switching Energy | 380µJ (off) |
| Test Condition | - |
| Gate Charge | 33 nC |
| Current - Collector (Ic) (Max) | 35 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Power - Max | 190 W |
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