IXSP15N120B
IGBT 1200V 30A 150W TO220ABManufacturer: IXYS
Categories: Single IGBTs
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IXYS IXSP15N120B, a robust insulated gate bipolar transistor (IGBT), offers a 1200V collector-emitter breakdown voltage and a continuous collector current of 30A. This through-hole TO-220-3 packaged device dissipates up to 150W and features a pulsed collector current capability of 60A. With a gate charge of 57 nC and a typical on-state voltage of 3.4V at 15V gate-emitter voltage and 15A collector current, it is suitable for applications requiring efficient switching. The operating temperature range is -55°C to 150°C. The IXSP15N120B finds utility in power supply design, motor control, and industrial automation sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BoxDownload Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.4V @ 15V, 15A |
| Supplier Device Package | TO-220-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 30ns/148ns |
| Switching Energy | 1.75mJ (off) |
| Test Condition | 960V, 15A, 10Ohm, 15V |
| Gate Charge | 57 nC |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 60 A |
| Power - Max | 150 W |
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