IXSK80N60B
IGBT 600V 160A 500W TO264Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXSK80N60B is a 600V, 160A Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. This PT-type IGBT features a maximum collector current of 160A and a pulsed collector current of 300A. With a power dissipation of 500W, it is suitable for demanding switching applications. The device exhibits a typical gate charge of 240 nC and a low on-state voltage of 2.5V at 15V gate-emitter voltage and 80A collector current. Switching characteristics include an off-state switching energy of 4.2mJ, with turn-on and turn-off delays of 60ns and 140ns respectively at 25°C. The IXSK80N60B is housed in a TO-264AA package, facilitating through-hole mounting and operation across a temperature range of -55°C to 150°C. This component is commonly utilized in industrial motor drives, power supplies, and welding equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 80A |
| Supplier Device Package | TO-264AA (IXSK) |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 60ns/140ns |
| Switching Energy | 4.2mJ (off) |
| Test Condition | 480V, 80A, 2.7Ohm, 15V |
| Gate Charge | 240 nC |
| Current - Collector (Ic) (Max) | 160 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 300 A |
| Power - Max | 500 W |
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