IXSK50N60BU1
IGBT 600V 75A 300W TO264Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXSK50N60BU1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This device features a 600V collector-emitter breakdown voltage and a continuous collector current capability of 75A, with a pulsed current rating of 200A. With a maximum power dissipation of 300W and a low on-state voltage of 2.5V at 15V Vge and 50A Ic, it offers excellent efficiency. The IXSK50N60BU1 is housed in a TO-264AA package for robust thermal management and features a through-hole mounting type. Key switching parameters include a gate charge of 167 nC and a reverse recovery time of 50 ns. This IGBT is suitable for use in power factor correction, motor drives, and uninterruptible power supplies.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 50 ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 50A |
| Supplier Device Package | TO-264AA (IXSK) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 70ns/150ns |
| Switching Energy | 3.3mJ (off) |
| Test Condition | 480V, 50A, 2.7Ohm, 15V |
| Gate Charge | 167 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 300 W |
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