IXSK50N60BD1
IGBT 600V 75A 300W TO264Manufacturer: IXYS
Categories: Single IGBTs
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IXYS IXSK50N60BD1 is a 600V, 75A Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This TO-264AA package component offers a continuous collector current of 75A and a pulsed current capability of 200A (Icm). With a maximum power dissipation of 300W, it is suitable for demanding environments. Key electrical parameters include a Vce(on) of 2.5V at 15V gate-emitter voltage and 50A collector current, and a gate charge of 167 nC. The device exhibits a typical on-time of 70ns and off-time of 150ns at 25°C, with a reverse recovery time (trr) of 35ns. Switching energy (Eoff) is rated at 3.3mJ. The IXSK50N60BD1 is utilized in power factor correction, motor drives, and uninterruptible power supplies. It is supplied in a tube package.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 35 ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 50A |
| Supplier Device Package | TO-264AA (IXSK) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 70ns/150ns |
| Switching Energy | 3.3mJ (off) |
| Test Condition | 480V, 50A, 2.7Ohm, 15V |
| Gate Charge | 167 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 300 W |
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