IXSK50N60AU1
IGBT 600V 75A 300W TO264AAManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXSK50N60AU1 is a 600V, 75A Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This device features a high surge current capability of 200A (Icm) and a continuous collector current of 75A (Ic). With a maximum power dissipation of 300W, it is suitable for demanding environments. The IGBT exhibits a typical gate charge of 190 nC and a collector-emitter on-voltage (Vce(on)) of 2.7V at 15V gate-emitter voltage and 50A collector current. Its reverse recovery time (trr) is 50 ns, and switching energy (Eoff) is 6 mJ under test conditions of 480V, 50A, 2.7 Ohms, and 15V. The IXSK50N60AU1 is packaged in a TO-264AA (IXSK) through-hole configuration, commonly found in power supply units, motor control, and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | - |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 50 ns |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 50A |
| Supplier Device Package | TO-264AA (IXSK) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 70ns/200ns |
| Switching Energy | 6mJ (off) |
| Test Condition | 480V, 50A, 2.7Ohm, 15V |
| Gate Charge | 190 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 300 W |