IXSK40N60CD1
IGBT 600V 75A 280W TO264Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXSK40N60CD1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This device features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 75A, with a pulsed current capability of 150A. The Vce(on) is specified at a maximum of 2.5V at 15V gate voltage and 40A collector current. With a maximum power dissipation of 280W and a low switching energy of 1mJ (off), this IGBT is suitable for applications requiring efficient power conversion. The IXSK40N60CD1 is presented in a TO-264AA package, facilitating through-hole mounting. Typical applications include industrial motor drives and high-power switching power supplies. The device offers a gate charge of 190 nC and a reverse recovery time of 35 ns under specified test conditions (480V, 40A, 2.7 Ohm, 15V). It operates within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 35 ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 40A |
| Supplier Device Package | TO-264AA (IXSK) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 50ns/70ns |
| Switching Energy | 1mJ (off) |
| Test Condition | 480V, 40A, 2.7Ohm, 15V |
| Gate Charge | 190 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 150 A |
| Power - Max | 280 W |
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