IXSK40N60BD1
IGBT 600V 75A 280W TO264Manufacturer: IXYS
Categories: Single IGBTs
Quality Control: Learn More
The IXYS IXSK40N60BD1 is a robust Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 75A, with a pulsed capability of 150A. Its low on-state voltage of 2.2V at 40A (Vge=15V) and a maximum power dissipation of 280W contribute to efficient operation. The device exhibits a gate charge of 190 nC and a typical turn-off switching energy of 1.8mJ. Designed for through-hole mounting in a TO-264AA package, the IXSK40N60BD1 is suitable for demanding applications in industrial power supplies, motor drives, and renewable energy systems. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 35 ns |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 40A |
| Supplier Device Package | TO-264AA (IXSK) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 50ns/110ns |
| Switching Energy | 1.8mJ (off) |
| Test Condition | 480V, 40A, 2.7Ohm, 15V |
| Gate Charge | 190 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 150 A |
| Power - Max | 280 W |
Request a Quote
Clients Also Buy
IXA20I1200PZ-TUB
DISC IGBT XPT-GENX3 TO-263D2
IXYK140N90C3
IGBT 900V 310A 1630W TO264
IXLF19N250A
IGBT 2500V 32A 250W I4PAC
