IXSK35N120BD1
IGBT 1200V 70A 300W TO264Manufacturer: IXYS
Categories: Single IGBTs
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IXYS IXSK35N120BD1 is a high-performance N-channel Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This component features a 1200V collector-emitter breakdown voltage and a continuous collector current capability of 70A (140A pulsed). With a maximum power dissipation of 300W and a low on-state voltage of 3.6V at 15V gate-emitter voltage and 35A collector current, it offers efficient power switching. The device exhibits typical switching times of 36ns turn-on and 160ns turn-off at 25°C, with a reverse recovery time of 40ns. Its 120nC gate charge and 5mJ turn-off switching energy contribute to optimized performance in high-frequency switching scenarios. Packaged in a TO-264AA through-hole configuration, the IXSK35N120BD1 is suitable for use in industrial motor drives, uninterruptible power supplies (UPS), and power factor correction circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 40 ns |
| Vce(on) (Max) @ Vge, Ic | 3.6V @ 15V, 35A |
| Supplier Device Package | TO-264AA (IXSK) |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 36ns/160ns |
| Switching Energy | 5mJ (off) |
| Test Condition | 960V, 35A, 5Ohm, 15V |
| Gate Charge | 120 nC |
| Current - Collector (Ic) (Max) | 70 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 140 A |
| Power - Max | 300 W |
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