IXSK35N120AU1
IGBT 1200V 70A 300W TO264Manufacturer: IXYS
Categories: Single IGBTs
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IXYS IXSK35N120AU1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This component features a 1200 V collector-emitter breakdown voltage and a continuous collector current rating of 70 A, with a pulsed current capability of 140 A. The IXSK35N120AU1 offers a maximum power dissipation of 300 W and a low on-state voltage of 4V at 15V gate-emitter voltage and 35A collector current. Its fast switching characteristics are indicated by a typical turn-on delay of 80 ns and turn-off delay of 400 ns at 25°C, with a reverse recovery time of 60 ns. The component is housed in a TO-264AA package, suitable for through-hole mounting. This IGBT is commonly employed in industrial motor drives, power supplies, and renewable energy systems. The gate charge is specified at 150 nC, and it operates across a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 60 ns |
| Vce(on) (Max) @ Vge, Ic | 4V @ 15V, 35A |
| Supplier Device Package | TO-264AA (IXSK) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 80ns/400ns |
| Switching Energy | 10mJ (off) |
| Test Condition | 960V, 35A, 2.7Ohm, 15V |
| Gate Charge | 150 nC |
| Current - Collector (Ic) (Max) | 70 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 140 A |
| Power - Max | 300 W |
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