IXSK30N60CD1
IGBT 600V 55A 200W TO264Manufacturer: IXYS
Categories: Single IGBTs
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IXYS IXSK30N60CD1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 55A, with a pulsed capability of 110A. The Vce(on) is a maximum of 2.5V at 15V gate-emitter voltage and 30A collector current, ensuring low conduction losses. With a maximum power dissipation of 200W and a switching energy of 700µJ (off), it is suitable for high-efficiency power conversion. The IXSK30N60CD1 is packaged in a TO-264AA (IXSK) through-hole configuration, operating within a temperature range of -55°C to 150°C. Typical applications include industrial motor drives, uninterruptible power supplies (UPS), and power factor correction circuits. Gate charge is specified at 100 nC, with turn-on and turn-off delays of 30ns and 90ns respectively at 25°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 50 ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 30A |
| Supplier Device Package | TO-264AA (IXSK) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 30ns/90ns |
| Switching Energy | 700µJ (off) |
| Test Condition | 480V, 30A, 4.7Ohm, 15V |
| Gate Charge | 100 nC |
| Current - Collector (Ic) (Max) | 55 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 110 A |
| Power - Max | 200 W |
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