IXSK30N60BD1
IGBT 600V 55A 200W TO264Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXSK30N60BD1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power conversion applications. This component offers a 600V collector-emitter breakdown voltage and a continuous collector current capability of 55A, with a pulsed current rating of 110A. It features a low on-state voltage (Vce(on)) of 2.7V at 15V gate-emitter voltage and 55A collector current, and a maximum power dissipation of 200W. The device exhibits a typical switching energy of 1.5mJ (off) at 480V and 30A, with turn-on and turn-off delays of 30ns and 150ns respectively. The IXSK30N60BD1 is housed in a TO-264AA package, facilitating through-hole mounting. Its robust design and electrical characteristics make it suitable for use in industrial power supplies, motor drives, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 50 ns |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 55A |
| Supplier Device Package | TO-264AA (IXSK) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 30ns/150ns |
| Switching Energy | 1.5mJ (off) |
| Test Condition | 480V, 30A, 4.7Ohm, 15V |
| Gate Charge | 100 nC |
| Current - Collector (Ic) (Max) | 55 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 110 A |
| Power - Max | 200 W |
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