IXSH50N60B
IGBT 600V 75A 250W TO247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXSH50N60B is a 600V, 75A insulated gate bipolar transistor (IGBT) designed for high-power applications. This PT-type IGBT features a 2.5V (max) saturation voltage at 15V gate-emitter voltage and 50A collector current, with a pulsed collector current capability of 200A. The device offers a power dissipation of 250W and a collector-emitter breakdown voltage of 600V. Key switching characteristics include a typical turn-on delay of 70ns and turn-off delay of 150ns at 25°C, with a switching energy of 3.3mJ (off). The IXSH50N60B is housed in a TO-247AD package suitable for through-hole mounting and operates across a temperature range of -55°C to 150°C. This component is commonly utilized in industrial power supplies, motor control, and welding equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 50A |
| Supplier Device Package | TO-247AD |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 70ns/150ns |
| Switching Energy | 3.3mJ (off) |
| Test Condition | 480V, 50A, 2.7Ohm, 15V |
| Gate Charge | 167 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 250 W |
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