IXSH45N120B
IGBT 1200V 75A 300W TO247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXSH45N120B is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This PT IGBT features a robust 1200V collector-emitter breakdown voltage and a continuous collector current rating of 75A, with a pulsed capability of 180A. It offers a low on-state voltage of 3V at 15V gate-emitter voltage and 45A collector current, ensuring efficient power transfer. The device dissipates up to 300W and has a typical switching energy of 13mJ (off) under specified test conditions (960V, 45A, 5 Ohm, 15V). With a gate charge of 120 nC and typical turn-on/off delays of 36ns/360ns at 25°C, the IXSH45N120B is suitable for applications requiring fast and reliable switching. It is packaged in a TO-247-3 (TO-247AD) through-hole configuration and operates across a wide temperature range of -55°C to 150°C. This component finds application in industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 45A |
| Supplier Device Package | TO-247AD |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 36ns/360ns |
| Switching Energy | 13mJ (off) |
| Test Condition | 960V, 45A, 5Ohm, 15V |
| Gate Charge | 120 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 180 A |
| Power - Max | 300 W |
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