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IXSH45N120B

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IXSH45N120B

IGBT 1200V 75A 300W TO247

Manufacturer: IXYS

Categories: Single IGBTs

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The IXYS IXSH45N120B is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This PT IGBT features a robust 1200V collector-emitter breakdown voltage and a continuous collector current rating of 75A, with a pulsed capability of 180A. It offers a low on-state voltage of 3V at 15V gate-emitter voltage and 45A collector current, ensuring efficient power transfer. The device dissipates up to 300W and has a typical switching energy of 13mJ (off) under specified test conditions (960V, 45A, 5 Ohm, 15V). With a gate charge of 120 nC and typical turn-on/off delays of 36ns/360ns at 25°C, the IXSH45N120B is suitable for applications requiring fast and reliable switching. It is packaged in a TO-247-3 (TO-247AD) through-hole configuration and operates across a wide temperature range of -55°C to 150°C. This component finds application in industrial motor drives, power supplies, and renewable energy systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic3V @ 15V, 45A
Supplier Device PackageTO-247AD
IGBT TypePT
Td (on/off) @ 25°C36ns/360ns
Switching Energy13mJ (off)
Test Condition960V, 45A, 5Ohm, 15V
Gate Charge120 nC
Current - Collector (Ic) (Max)75 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)180 A
Power - Max300 W

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