IXSH45N120
IGBT 1200V 75A 300W TO247ADManufacturer: IXYS
Categories: Single IGBTs
Quality Control: Learn More
The IXYS IXSH45N120 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This device features a 1200 V collector-emitter breakdown voltage and a continuous collector current rating of 75 A, with a pulsed capability of 180 A. Its low on-state voltage of 3 V at 15 V gate-emitter voltage and 45 A collector current, coupled with a maximum power dissipation of 300 W, ensures efficient operation.
The TO-247AD package with through-hole mounting facilitates integration into various circuit designs. Key switching parameters include an energy loss of 21 mJ (off) and typical turn-on and turn-off delays of 80 ns and 400 ns, respectively, at 25°C. The gate charge is specified at 150 nC. This IXYS IGBT is suitable for power conversion systems across industries such as industrial automation, renewable energy, and motor control. It is supplied in a tube package and operates within an ambient temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 45A |
| Supplier Device Package | TO-247AD |
| IGBT Type | - |
| Td (on/off) @ 25°C | 80ns/400ns |
| Switching Energy | 21mJ (off) |
| Test Condition | 960V, 45A, 2.7Ohm, 15V |
| Gate Charge | 150 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 180 A |
| Power - Max | 300 W |
Request a Quote
Clients Also Buy
IXA20I1200PZ-TUB
DISC IGBT XPT-GENX3 TO-263D2
IXYK140N90C3
IGBT 900V 310A 1630W TO264
IXLF19N250A
IGBT 2500V 32A 250W I4PAC
