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IXSH45N100

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IXSH45N100

IGBT 1000V 75A 300W TO247

Manufacturer: IXYS

Categories: Single IGBTs

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The IXYS IXSH45N100 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This TO-247AD packaged device features a collector-emitter breakdown voltage of 1000V and a continuous collector current capability of 75A, with a pulsed current rating of 180A. It offers a low on-state voltage of 2.7V at 15V gate-emitter voltage and 45A collector current, with a maximum power dissipation of 300W. The device exhibits typical switching characteristics of 80ns turn-on delay and 400ns turn-off delay at 25°C, with a switching energy of 15mJ (off) under test conditions of 800V, 45A, and 2.7 Ohms. Its standard input type and through-hole mounting make it suitable for power switching applications across various industrial sectors, including power supplies, motor drives, and renewable energy systems. The operating temperature range is -55°C to 150°C (TJ).

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 45A
Supplier Device PackageTO-247AD
IGBT Type-
Td (on/off) @ 25°C80ns/400ns
Switching Energy15mJ (off)
Test Condition800V, 45A, 2.7Ohm, 15V
Gate Charge165 nC
Current - Collector (Ic) (Max)75 A
Voltage - Collector Emitter Breakdown (Max)1000 V
Current - Collector Pulsed (Icm)180 A
Power - Max300 W

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