IXSH45N100
IGBT 1000V 75A 300W TO247Manufacturer: IXYS
Categories: Single IGBTs
Quality Control: Learn More
The IXYS IXSH45N100 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This TO-247AD packaged device features a collector-emitter breakdown voltage of 1000V and a continuous collector current capability of 75A, with a pulsed current rating of 180A. It offers a low on-state voltage of 2.7V at 15V gate-emitter voltage and 45A collector current, with a maximum power dissipation of 300W. The device exhibits typical switching characteristics of 80ns turn-on delay and 400ns turn-off delay at 25°C, with a switching energy of 15mJ (off) under test conditions of 800V, 45A, and 2.7 Ohms. Its standard input type and through-hole mounting make it suitable for power switching applications across various industrial sectors, including power supplies, motor drives, and renewable energy systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 45A |
| Supplier Device Package | TO-247AD |
| IGBT Type | - |
| Td (on/off) @ 25°C | 80ns/400ns |
| Switching Energy | 15mJ (off) |
| Test Condition | 800V, 45A, 2.7Ohm, 15V |
| Gate Charge | 165 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 1000 V |
| Current - Collector Pulsed (Icm) | 180 A |
| Power - Max | 300 W |
Request a Quote
Clients Also Buy
IXA20I1200PZ-TUB
DISC IGBT XPT-GENX3 TO-263D2
IXGB75N60BD1
IGBT 600V 120A 360W PLUS264
IXGA48N60A3-TRL
IXGA48N60A3 TRL
