IXSH35N140A
IGBT 1400V 70A 300W TO247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXSH35N140A is a high-performance insulated gate bipolar transistor (IGBT) designed for demanding applications. This single IGBT, part number IXSH35N140A, features a 1400V collector-emitter breakdown voltage and a continuous collector current capability of 70A, with a pulsed capability of 140A. It offers a low on-state voltage (Vce(on)) of 4V at 15V gate-emitter voltage and 35A collector current. The device boasts a maximum power dissipation of 300W and a gate charge of 120 nC. With a standard input type, this IGBT is suitable for through-hole mounting in a TO-247-3 package. Operating temperature ranges from -55°C to 150°C (TJ). Switching characteristics include a turn-on delay (Td(on)) of 40ns and a turn-off delay (Td(off)) of 150ns at 25°C, with an off-state switching energy of 4mJ, tested under conditions of 960V, 35A, 3 Ohm, and 15V. Its robust construction and electrical parameters make it ideal for power conversion systems in industrial motor drives, power supplies, and high-voltage switching applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 4V @ 15V, 35A |
| Supplier Device Package | TO-247AD |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 40ns/150ns |
| Switching Energy | 4mJ (off) |
| Test Condition | 960V, 35A, 3Ohm, 15V |
| Gate Charge | 120 nC |
| Current - Collector (Ic) (Max) | 70 A |
| Voltage - Collector Emitter Breakdown (Max) | 1400 V |
| Current - Collector Pulsed (Icm) | 140 A |
| Power - Max | 300 W |
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