IXSH35N100A
IGBT 1000V 70A 300W TO247ADManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXSH35N100A is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This through-hole component features a 1000V collector-emitter breakdown voltage and a continuous collector current capability of 70A, with a pulsed capability of 140A. It offers a maximum power dissipation of 300W and a low on-state voltage of 3.5V at 15V gate-emitter voltage and 35A collector current. The device exhibits a typical switching energy of 10mJ (off) at 800V and 35A, with on and off delays specified at 80ns and 400ns respectively at 25°C. The TO-247AD package ensures robust thermal performance and ease of mounting. This IGBT is suitable for use in industrial motor drives, uninterruptible power supplies (UPS), and high-power switching power supplies.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.5V @ 15V, 35A |
| Supplier Device Package | TO-247AD |
| IGBT Type | - |
| Td (on/off) @ 25°C | 80ns/400ns |
| Switching Energy | 10mJ (off) |
| Test Condition | 800V, 35A, 2.7Ohm, 15V |
| Gate Charge | 180 nC |
| Current - Collector (Ic) (Max) | 70 A |
| Voltage - Collector Emitter Breakdown (Max) | 1000 V |
| Current - Collector Pulsed (Icm) | 140 A |
| Power - Max | 300 W |
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