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IXSH30N60U1

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IXSH30N60U1

IGBT 600V 50A 200W TO247

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

IXYS IXSH30N60U1 is a 600V, 50A Insulated Gate Bipolar Transistor (IGBT) with a maximum power dissipation of 200W. This through-hole component is housed in a TO-247AD package. Key electrical characteristics include a collector current of 50A (100A pulsed), a Vce(on) of 2.5V at 15V gate-source voltage and 30A collector current, and a gate charge of 110 nC. The device features a reverse recovery time of 50 ns and switching energy of 2.5mJ (off) under test conditions of 480V, 30A, 4.7 Ohm, and 15V. It operates across a temperature range of -55°C to 150°C. This IGBT is suitable for high-power switching applications across industries such as industrial motor drives and power supplies.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)50 ns
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 30A
Supplier Device PackageTO-247AD
IGBT Type-
Td (on/off) @ 25°C60ns/400ns
Switching Energy2.5mJ (off)
Test Condition480V, 30A, 4.7Ohm, 15V
Gate Charge110 nC
Current - Collector (Ic) (Max)50 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)100 A
Power - Max200 W

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