IXSH30N60CD1
IGBT 600V 55A 200W TO247ADManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXSH30N60CD1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This TO-247AD packaged device features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 55A, with a pulsed capability of up to 110A. With a maximum power dissipation of 200W and a low on-state voltage of 2.5V at 15V gate-source voltage and 30A collector current, it offers efficient switching. Key performance metrics include a gate charge of 100nC and a reverse recovery time of 50ns. The IXYS IXSH30N60CD1 is suitable for use in industrial motor drives, power supplies, and renewable energy systems. Its operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 50 ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 30A |
| Supplier Device Package | TO-247AD |
| IGBT Type | - |
| Td (on/off) @ 25°C | 30ns/90ns |
| Switching Energy | 700µJ (off) |
| Test Condition | 480V, 30A, 4.7Ohm, 15V |
| Gate Charge | 100 nC |
| Current - Collector (Ic) (Max) | 55 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 110 A |
| Power - Max | 200 W |
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