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IXSH30N60C

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IXSH30N60C

IGBT 600V 55A 200W TO247AD

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXSH30N60C is a Power Transistor featuring 600V collector-emitter breakdown voltage and a continuous collector current of 55A, with a pulsed current capability of 110A. This PT IGBT offers a maximum power dissipation of 200W and a low on-state voltage of 2.5V at 15V gate-emitter voltage and 30A collector current. With a typical gate charge of 100nC and switching times of 30ns on and 90ns off at 25°C (tested under 480V, 30A, 4.7 Ohm, 15V), this component is designed for high-efficiency switching applications. The TO-247AD package facilitates through-hole mounting, and the operating temperature range is -55°C to 150°C (TJ). This device finds application in industrial automation, power supplies, and motor control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 30A
Supplier Device PackageTO-247AD
IGBT TypePT
Td (on/off) @ 25°C30ns/90ns
Switching Energy700µJ (off)
Test Condition480V, 30A, 4.7Ohm, 15V
Gate Charge100 nC
Current - Collector (Ic) (Max)55 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)110 A
Power - Max200 W

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