IXSH30N60BD1
IGBT 600V 55A 200W TO247Manufacturer: IXYS
Categories: Single IGBTs
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IXYS IXSH30N60BD1 is a 600V, 55A insulated gate bipolar transistor (IGBT) designed for high-power applications. This device features a maximum continuous collector current of 55A and a pulsed collector current of 110A. With a power dissipation rating of 200W and a collector-emitter voltage (Vce(on)) of 2.7V at 15V gate-emitter voltage and 55A collector current, it offers efficient switching performance. The IXSH30N60BD1 has a gate charge of 100 nC and a reverse recovery time of 50 ns. It operates within a temperature range of -55°C to 150°C and is housed in a TO-247AD package for through-hole mounting. This component is suitable for use in power supplies, motor control, and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 50 ns |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 55A |
| Supplier Device Package | TO-247AD |
| IGBT Type | - |
| Td (on/off) @ 25°C | 30ns/150ns |
| Switching Energy | 1.5mJ (off) |
| Test Condition | 480V, 30A, 4.7Ohm, 15V |
| Gate Charge | 100 nC |
| Current - Collector (Ic) (Max) | 55 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 110 A |
| Power - Max | 200 W |
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