IXSH30N60B
IGBT 600V 55A 200W TO247ADManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXSH30N60B is a Power Transistor (PT) Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current capability of 55A, with a pulsed current rating of 110A. It offers a maximum power dissipation of 200W and a low on-state voltage of 2V at 15V gate-emitter voltage and 30A collector current. The device exhibits a typical gate charge of 100 nC and switching times of 30ns turn-on and 150ns turn-off at 25°C, with an off-state switching energy of 1.5 mJ. The IXSH30N60B is housed in a TO-247AD package for through-hole mounting and operates across a temperature range of -55°C to 150°C. This device is suitable for use in power conversion systems, motor drives, and industrial power supplies.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 30A |
| Supplier Device Package | TO-247AD |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 30ns/150ns |
| Switching Energy | 1.5mJ (off) |
| Test Condition | 480V, 30A, 4.7Ohm, 15V |
| Gate Charge | 100 nC |
| Current - Collector (Ic) (Max) | 55 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 110 A |
| Power - Max | 200 W |
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