IXSH30N60AU1
IGBT 600V 50A 200W TO247Manufacturer: IXYS
Categories: Single IGBTs
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IXYS IXSH30N60AU1 is a high-efficiency, high-speed N-channel Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This component boasts a 600V collector-emitter breakdown voltage and a continuous collector current capability of 50A, with a pulsed capability of 100A. The maximum power dissipation is rated at 200W. Key performance characteristics include a typical gate charge of 110 nC and a low on-state voltage drop of 3V at 15V gate-source voltage and 30A collector current. Switching performance is further defined by a reverse recovery time of 50ns and switching energy of 2.5mJ (off) under test conditions of 480V, 30A, 4.7 Ohms, and 15V. The IXSH30N60AU1 is housed in a TO-247AD package, suitable for through-hole mounting, and operates within a temperature range of -55°C to 150°C (TJ). This device finds application in industrial motor drives, uninterruptible power supplies (UPS), and power factor correction circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 50 ns |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 30A |
| Supplier Device Package | TO-247AD |
| IGBT Type | - |
| Td (on/off) @ 25°C | 60ns/400ns |
| Switching Energy | 2.5mJ (off) |
| Test Condition | 480V, 30A, 4.7Ohm, 15V |
| Gate Charge | 110 nC |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 100 A |
| Power - Max | 200 W |
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