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IXSH25N120AU1

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IXSH25N120AU1

IGBT 1200V 50A 200W TO247

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXSH25N120AU1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This component features a 1200V collector-emitter breakdown voltage and a continuous collector current capability of 50A, with a pulsed capability of 80A. With a maximum power dissipation of 200W and a low on-state voltage of 4V at 25A and 15V gate-emitter voltage, it offers efficient power switching. The device exhibits a gate charge of 120 nC and a typcial turn-off delay of 450 ns at 25°C under test conditions of 960V, 25A, 18 Ohm, 15V, with a reverse recovery time of 60 ns. The IXYS IXSH25N120AU1 is packaged in a TO-247-3 (TO-247AD) through-hole package, suitable for operation across a wide temperature range of -55°C to 150°C. This IGBT is commonly utilized in industrial motor drives, uninterruptible power supplies (UPS), and solar inverters.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)60 ns
Vce(on) (Max) @ Vge, Ic4V @ 15V, 25A
Supplier Device PackageTO-247AD
IGBT Type-
Td (on/off) @ 25°C100ns/450ns
Switching Energy9.6mJ (off)
Test Condition960V, 25A, 18Ohm, 15V
Gate Charge120 nC
Current - Collector (Ic) (Max)50 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)80 A
Power - Max200 W

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