IXSH25N120A
IGBT 1200V 50A 200W TO247ADManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXSH25N120A is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This discrete power semiconductor offers a 1200V collector-emitter breakdown voltage and a continuous collector current capability of 50A, with a pulsed current rating of 80A. Featuring a maximum power dissipation of 200W, it is housed in a standard TO-247AD package for through-hole mounting. Key parameters include a gate charge of 120 nC and a Vce(on) of 4V at 15V gate-source voltage and 25A collector current. Switching characteristics are specified with an energy of 9.6mJ (off) and typical on/off delays of 100ns/450ns at 25°C, under test conditions of 960V, 25A, and 18 Ohm. This component is suitable for industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 4V @ 15V, 25A |
| Supplier Device Package | TO-247AD |
| IGBT Type | - |
| Td (on/off) @ 25°C | 100ns/450ns |
| Switching Energy | 9.6mJ (off) |
| Test Condition | 960V, 25A, 18Ohm, 15V |
| Gate Charge | 120 nC |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 200 W |
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