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IXSH24N60U1

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IXSH24N60U1

IGBT 600V 48A 150W TO247

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXSH24N60U1 is a HiPerFAST™ series Insulated Gate Bipolar Transistor designed for high-efficiency switching applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current of 48A, with a pulsed capability of 96A. The low on-state voltage of 2.2V at 15V gate-emitter voltage and 24A collector current, along with a typical switching energy of 2mJ (off) under specified test conditions (480V, 24A, 10 Ohm, 15V), contributes to reduced conduction and switching losses. With a gate charge of 75 nC and turn-on/turn-off delays of 100ns/450ns, the IXSH24N60U1 offers rapid switching performance. The device operates across a wide temperature range from -55°C to 150°C and is packaged in a TO-247-3 (TO-247AD) through-hole configuration, suitable for demanding power electronics designs in industries such as industrial motor control, power supplies, and renewable energy systems. The maximum power dissipation is rated at 150W.

Additional Information

Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)50 ns
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 24A
Supplier Device PackageTO-247AD
IGBT Type-
Td (on/off) @ 25°C100ns/450ns
Switching Energy2mJ (off)
Test Condition480V, 24A, 10Ohm, 15V
Gate Charge75 nC
Current - Collector (Ic) (Max)48 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)96 A
Power - Max150 W

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