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IXSH24N60BD1

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IXSH24N60BD1

IGBT 600V 48A 150W TO247

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXSH24N60BD1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This TO-247AD packaged device offers a robust 600V collector-emitter breakdown voltage and a continuous collector current capability of 48A, with a pulsed current capability of 96A. Optimized for efficient switching, it exhibits a Vce(on) of 2.5V maximum at 15V gate drive and 24A collector current, and a low switching energy of 1.3mJ (off) under test conditions of 480V, 24A, 33 Ohm, and 15V. The device features a typical gate charge of 41 nC and a reverse recovery time of 25 ns. With a maximum power dissipation of 150W and an operating temperature range of -55°C to 150°C (TJ), the IXSH24N60BD1 is suitable for applications in industrial motor drives, power supplies, and welding equipment.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)25 ns
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 24A
Supplier Device PackageTO-247AD
IGBT Type-
Td (on/off) @ 25°C50ns/150ns
Switching Energy1.3mJ (off)
Test Condition480V, 24A, 33Ohm, 15V
Gate Charge41 nC
Current - Collector (Ic) (Max)48 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)96 A
Power - Max150 W

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