IXSH24N60BD1
IGBT 600V 48A 150W TO247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXSH24N60BD1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This TO-247AD packaged device offers a robust 600V collector-emitter breakdown voltage and a continuous collector current capability of 48A, with a pulsed current capability of 96A. Optimized for efficient switching, it exhibits a Vce(on) of 2.5V maximum at 15V gate drive and 24A collector current, and a low switching energy of 1.3mJ (off) under test conditions of 480V, 24A, 33 Ohm, and 15V. The device features a typical gate charge of 41 nC and a reverse recovery time of 25 ns. With a maximum power dissipation of 150W and an operating temperature range of -55°C to 150°C (TJ), the IXSH24N60BD1 is suitable for applications in industrial motor drives, power supplies, and welding equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 25 ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 24A |
| Supplier Device Package | TO-247AD |
| IGBT Type | - |
| Td (on/off) @ 25°C | 50ns/150ns |
| Switching Energy | 1.3mJ (off) |
| Test Condition | 480V, 24A, 33Ohm, 15V |
| Gate Charge | 41 nC |
| Current - Collector (Ic) (Max) | 48 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 96 A |
| Power - Max | 150 W |
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